AP2332GEN-HF
12
100
f=1.0MHz
I
D
=0.1A
V
GS
, Gate to Source Voltage (V)
10
V
DS
=200V
80
C (pF)
8
60
6
40
4
C
iss
20
2
0
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1
Duty factor=0.5
0.1
Operation in this area
limited by R
DS(ON)
100us
1ms
10ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
I
D
(A)
0.05
0.01
100ms
1s
DC
0.02
P
DM
t
T
0.01
0.01
Single Pulse
0.001
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 250℃/W
T
A
=25
o
C
Single Pulse
0.0001
0.001
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
V
G
I
D
, Drain Current (mA)
60
Q
G
10V
Q
GS
40
Q
GD
20
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature ( C )
o
Fig 11. Maximum Continuous Drain
Current
v.s. Ambient Temperature
Fig 12. Gate Charge Circuit
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
