AP2318AGEN-HF
2.5
1.6
T
A
= 25 C
2.0
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
4.0V
T
A
=150 C
1.2
o
5.0V
4.5V
4.0V
1.5
0.8
1.0
2.5V
0.4
0.5
2.5V
V
G
=2.0V
V
G
=2.0V
0.0
0
1
2
3
4
5
6
0.0
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3300
2.0
I
D
=200mA
T
A
=25
o
C
Normalized R
DS(ON)
1
2
3
4
5
1.6
I
D
=500mA
V
G
=4V
R
DS(ON)
(m
Ω
)
2300
1.2
1300
0.8
300
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
2
I
D
=250uA
1.6
1.6
I
S
(A)
1.2
Normalized V
GS(th)
(V)
1.4
1.2
T
j
=150
o
C
0.8
T
j
=25
o
C
0.8
0.4
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
