AP2317GN-HF
f=1.0MHz
8
1200
I
D
= -4A
7
-V
GS
, Gate to Source Voltage (V)
1000
6
800
5
C
iss
C (pF)
V
DS
= -10V
65mΩ
4
600
3
400
2
200
1
C
oss
C
rss
0
0
5
10
15
20
25
1
5
9
13
17
21
25
0
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
-I
D
(A)
1ms
1
0.05
10ms
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Single Pulse
0.01
0.1
100ms
T
A
=25
o
C
Single Pulse
1s
DC
1
10
100
Rthja = 270℃/W
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
Charge
t
d(off)
t
f
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4