AP2310GK-HF
12
f=1.0MHz
610
10
I
D
=2.5A
V
DS
=48V
C
iss
V
GS
, Gate to Source Voltage (V)
8
410
6
C (pF)
210
4
2
C
oss
C
rss
0
0
4
8
12
16
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
0.2
100us
1ms
0.1
0.1
0.05
I
D
(A)
1
0.02
0.01
10ms
100ms
0.1
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 120℃/W
℃
1s
T
A
=25
o
C
Single Pulse
0.01
0.1
1
10
100
DC
0.001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
6
V
G
5
I
D
, Drain Current (A)
Q
G
4
4.5V
Q
GS
Q
GD
3
2
1
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature (
o
C )
Fig 11. Maximum Continuous Drain Current
v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
