AP2310GG-HF
10
800
f=1.0MHz
I
D
= 2.5 A
V
GS
, Gate to Source Voltage (V)
8
600
6
C (pF)
V
DS
= 30V
V
DS
= 36V
V
DS
= 48V
C
iss
400
4
200
2
C
oss
C
rss
0
0
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thjc
)
0.2
0.1
100us
1ms
10ms
100ms
0.1
I
D
(A)
0.05
1
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
100
1000
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Rthja=100℃/W
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform