AP2309N
45
45
40
T
A
=25
o
C
-10V
-7.0V
-I
D
, Drain Current (A)
40
T
A
= 150
o
C
-10V
-7.0V
35
35
-I
D
, Drain Current (A)
30
30
25
25
20
-5.0V
-4.5V
20
-5.0V
-4.5V
15
15
10
V
G
= - 3 .0V
10
V
G
= - 3 .0V
5
5
0
0
0
2
4
6
8
10
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
1.6
I
D
=-2.6A
95
T
A
=25
o
C
Normalized R
DS(ON)
1.4
I
D
=3A
V
G
=10V
R
DS(ON)
(m
Ω
)
85
1.2
75
1.0
65
0.8
55
0.6
3
5
7
9
11
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.3
3
2
Normalized -V
GS(th)
(V)
1.2
1.1
-I
S
(A)
T
j
=150
o
C
1
T
j
=25
o
C
0.9
0
0
0.2
0.4
0.6
0.8
1
0.7
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
