AP2307N
16
14
14
T
A
=25
o
C
-I
D
, Drain Current (A)
I
D
, Drain Current (A)
12
-5.0V
-4.5V
-3.0V
-2.5V
V
G
= - 1.8 V
T
A
= 150
o
C
12
10
-5.0V
-4.5V
-3.0V
-2.5V
V
G
= - 1.8 V
10
8
8
6
6
4
4
2
2
0
0
1
2
3
4
5
6
0
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.6
I
D
=-3A
T
A
=25 C
60
1.4
o
I
D
= -4A
V
G
= -4.5V
Normalized R
DS(ON)
1
3
5
7
9
R
DS(ON)
(
Ω
)
1.2
1.0
50
0.8
40
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
3
1.5
2
T
j
=150
o
C
1
T
j
=25
o
C
Normalized -V
GS(th)
(V)
1
-I
S
(A)
1.0
0.5
0
0.0
0
0.2
0.4
0.6
0.8
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
