AP2309GEN-HF
20
20
T
A
=25 C
16
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
T
A
= 150
o
C
16
12
12
65mΩ
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
8
8
4
4
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
1.6
I
D
= -3A
T
A
=25
o
C
1.4
I
D
= -4A
V
GS
= -10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
60
1.2
1
50
0.8
40
2
4
6
8
10
0.6
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
4
I
D
= -250uA
1.6
3
Normalized -V
GS(th)
-I
S
(A)
1.2
2
T
j
=150 C
o
T
j
=25 C
o
0.8
1
0.4
2.01E+08
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
