AP2308GEN-HF
4.5
3.5
4.0
T
A
= 25
o
C
5.0V
4.5V
I
D
, Drain Current (A)
3.0
T
A
=150
o
C
5.0V
4.5V
I
D
, Drain Current (A)
3.5
2.5
3.0
2.5
3.5V
3.5V
2.0
2.0
1.5
1.5
2.5V
2.5V
1.0
1.0
0.5
0.5
V
G
= 1 .5V
0.0
1.0
2.0
3.0
V
G
= 1 .5V
0.0
0.0
0.0
1.0
2.0
3.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
700
1.6
I
D
=0.5A
T
A
=25
o
C
600
1.4
I
D
=1.2A
V
G
=4.5V
Normalized R
DS(ON)
2
3
4
5
R
DSON
(m
Ω
)
1.2
500
1.0
400
0.8
300
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.0
0.8
1.5
0.6
Normalized V
GS(th)
1.2
I
S
(A)
1.0
0.4
T
j
=150
o
C
0.2
T
j
=25
o
C
0.5
0.0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
