AP2307GN-HF
8
10000
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
I
D
=-4A
V
DS
= -1 2 V
6
C (pF)
4
1000
C
iss
2
C
oss
C
rss
0
100
0
8
16
24
32
1
5
9
13
17
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.00
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10.00
Operation in this
area limited by
R
DS(ON)
100us
1ms
0.2
0.1
0.1
0.05
-I
D
(A)
1.00
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270℃/W
10ms
100ms
0.10
0.01
Single Pulse
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
