AP2306GN
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
-
-
13
-
-
-
8.7
1.5
3.6
6
14
18.4
2.8
603
144
111
Max. Units
-
-
30
35
50
90
-
-
1
10
±100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5.5A
V
GS
=4.5V, I
D
=5.3A
V
GS
=2.5V, I
D
=2.6A
V
GS
=1.8V, I
D
=1.0A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=55
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5.3A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=
± 12V
I
D
=5.3A
V
DS
=10V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=2Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=15V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
trr
Qrr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16.8
11
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
