AP2306AGN
f=1.0MHz
14
10000
12
V
GS
, Gate to Source Voltage (V)
I
D
=5A
V
DS
=16V
1000
10
8
Ciss
C (pF)
6
100
4
Coss
Crss
2
0
10
0
5
10
15
20
25
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
1ms
I
D
(A)
1
0.05
P
DM
0.01
t
T
10ms
0.1
0.01
Single Pulse
100ms
T
A
=25
o
C
Single Pulse
1s
DC
1
10
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
℃
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
