AP2306AGEN-HF
20
16
T
A
= 25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
=150 C
o
12
5.0V
4.5V
3.5V
2.5V
12
8
8
V
G
= 2.0 V
4
V
G
= 2.0 V
4
0
0.0
2.0
4.0
6.0
8.0
10.0
0
0.0
2.0
4.0
6.0
8.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
70
2.0
I
D
=3A
T
A
=25
o
C
60
1.6
I
D
=4A
V
G
=4.5V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
50
1.2
40
0.8
30
0
2
4
6
8
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
4.0
3.0
1.5
2.0
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
(V)
I
S
(A)
1.0
1.0
0.5
0.0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
