AP2305AN
12
10000
f=1.0MHz
10
-V
GS
, Gate to Source Voltage (V)
I
D
= -3.2A
V
DS
= -24V
8
1000
65mΩ
Ciss
6
C (pF)
4
100
Coss
Crss
2
0
0
2
4
6
8
10
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
0.05
-I
D
(A)
1
1ms
P
DM
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
10ms
0.1
0.01
Single pulse
100ms
T
A
=25 C
Single Pulse
o
Rthja = 270℃/W
℃
1s
DC
10
100
0.01
0.1
1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
