AP2304GN-HF
10
1000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
V
DS
=15V
I
D
=2.5A
6
C (pF)
100
C
iss
C
oss
C
rss
4
2
0
0
1
2
3
4
5
6
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
I
D
(A)
0.05
1ms
1
P
DM
0.01
t
T
10ms
0
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270℃/W
100ms
T
A
=25 C
Single Pulse
o
1s
DC
1
10
100
0
0.001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
