AP2302AGN-HF
8
500
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=4A
V
DS
=10V
6
400
C (pF)
300
C
iss
4
200
2
100
C
oss
C
rss
0
0
2
4
6
8
10
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
0.2
100us
0.1
0.1
I
D
(A)
0.05
1
1ms
10ms
0.02
0.01
P
DM
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
100ms
1s
DC
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
