AP2301N-HF
f=1.0MHz
8
800
I
D
= -2A
V
DS
= -10V
-V
GS
, Gate to Source Voltage (V)
6
600
C (pF)
65mΩ
400
C
iss
4
2
200
0
0
2
4
6
8
10
0
1
5
9
13
17
C
oss
C
rss
21
25
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
Operation in this area
limited by R
DS(ON)
-I
D
(A)
100us
1ms
10ms
0.1
0.1
0.05
1
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 350℃/W
0.01
Single Pulse
0.1
100ms
T
A
=25
o
C
Single Pulse
1s
DC
1
10
100
0.01
0.01
0.1
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
4
V
G
-I
D
, Drain Current (A)
3
Q
G
-4.5V
Q
GS
2
Q
GD
1
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature ( C )
o
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
