AP2301GN
10
10
T
A
=25
o
C
8
V
GS
= -5V
V
GS
= -4V
8
T
A
=150 C
o
V
GS
= -5V
V
GS
= -4V
V
GS
= -3V
-I
D
, Drain Current (A)
V
GS
= -3V
6
-I
D
, Drain Current (A)
6
4
4
2
V
GS
= -2V
V
GS
= -2V
2
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
800
1.8
1.6
600
I
D
= -2A
T
A
=25
℃
Normalized R
DS(ON)
1.4
I
D
= -2.8A
V
GS
= -5V
R
DS(ON)
(
Ω
)
400
1.2
1
200
0.8
0
0
2
4
6
8
10
0.6
-50
0
50
100
o
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
10
1.5
-V
GS(th)
(V)
1
1.0
-I
S
(A)
T
j
=150
o
C
0
T
j
=25
o
C
0.5
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
