AP2301AGN-HF
f=1.0MHz
6
1000
-V
GS
, Gate to Source Voltage (V)
5
I
D
= -3A
V
DS
=-10V
800
4
65mΩ
C (pF)
600
C
iss
3
400
2
200
1
C
oss
C
rss
0
0
2
4
6
8
10
12
0
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thja
)
0.2
10
Operation in this area
limited by R
DS(ON)
100us
1ms
0.1
0.1
-I
D
(A)
0.05
1
10ms
100ms
0.1
0.02
P
DM
t
T
Single Pulse
0.01
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
4
V
DS
=-5V
-I
D
, Drain Current (A)
6
-I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
T
j
=-40
o
C
0
0.5
1
1.5
2
2.5
3
3
4
2
2
1
0
0
25
50
75
100
125
150
-V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
