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AP20T15GM-HF 参数 Datasheet PDF下载

AP20T15GM-HF图片预览
型号: AP20T15GM-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用:
文件页数/大小: 4 页 / 54 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP20T15GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Simple Drive Requirement
Lower On-resistance
Fast Switching Characteristic
Halogen Free & RoHS Compliant
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
150V
70mΩ
4A
S
D
D
D
D
G
Description
AP20T15 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 10V
Drain Current , V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
150
+20
4
2.5
16
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient
3
Value
50
Unit
℃/W
Data and specifications subject to change without notice
1
201311111