AP20T15GH-HF
12
3200
f=1.0MHz
I
D
=15A
V
DS
=120V
V
GS
, Gate to Source Voltage (V)
10
2400
8
C
iss
C (pF)
1600
6
4
800
2
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Operation in this area
limited by R
DS(ON)
Duty factor=0.5
100us
I
D
(A)
10
0.2
0.1
1ms
1
0.1
0.05
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
P
DM
0.02
t
T
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.1
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
32
V
G
I
D
, Drain Current (A)
24
Q
G
10V
16
Q
GS
Q
GD
8
Charge
0
25
50
75
100
125
150
Q
T
C
, Case Temperature (
o
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4
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