AP20T03GT-HF
20
16
T
A
= 25 C
16
o
10V
7 .0V
5 .0V
4.5 V
I
D
, Drain Current (A)
12
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
I
D
, Drain Current (A)
12
8
8
4
4
V
G
= 3. 0 V
V
G
= 3.0V
0
0
0
1
2
3
4
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
75
2.0
I
D
=2A
T
A
=25
o
C
65
I
D
=3A
V
G
= 10V
1.6
55
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.2
45
0.8
35
0.4
2
4
6
8
10
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
8
1.6
Normalized V
GS(th)
I
S
(A)
6
1.2
T
j
=150
o
C
4
T
j
=25
o
C
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3