AP20T03GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
30V
50mΩ
12.5A
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP20T03GJ) is
available for low-profile applications.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
12.5
8
40
12.5
0.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
10
62.5
110
Unit
℃/W
℃/W
℃/W
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
1
200902104
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
