AP20P02GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min. Typ. Max. Units
-20
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.03
-
-
52
85
-
-
-1
-25
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-8A
V
GS
=-2.5V, I
D
=-5A
-
-
-
15
-
-
-
13.5
2.1
1.6
12
20
45
27
1050
410
110
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-8A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
= ± 12
I
D
=-8A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-8A
R
G
=3.3Ω,V
GS
=-4.5V
R
D
=1.25Ω
V
GS
=0V
V
DS
=-16V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
±100
nA
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=-1.2V
T
j
=25℃, I
S
=-10A, V
GS
=0V
Min. Typ. Max. Units
-
-
-
-
-
-
-10
-50
-1.2
A
A
V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
2
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
