AP20N03S/P
12
1000
f=1.0MHz
I
D
=10A
V
GS
, Gate to Source Voltage (V)
10
8
6
C (pF)
V
D
=16V
V
D
=20V
V
D
=24V
Ciss
Coss
100
4
Crss
2
0
0
2
4
6
8
10
12
10
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
DUTY=0.5
Normalized Thermal Response (R
thjc
)
100us
0.2
I
D
(A)
0.1
0.1
10
1ms
0.05
P
DM
t
0.02
10ms
T
c
=25
o
C
Single Pulse
1
1
10
T
0.01
Single Pulse
100ms
DC
100
0.01
0.00001
0.0001
0.001
0.01
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.1
1
V
DS
(V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
R
D
V
DS
D
TO THE
OSCILLOSCOPE
D
V
DS
TO THE
OSCILLOSCOPE
0.5x RATED
G
0.8x RATED V
DS
R
G
G
S
+
10V
-
S
V
GS
+
V
GS
1~ 3 mA
-
I
G
I
D
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
