AP20GT60W
160
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
0.2
120
Power Dissipation (W)
0.1
0.1
0.05
80
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
40
0
0
25
50
75
100
125
150
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Junction Temperature (
℃
)
t , Pulse Width (s)
Fig7. Power Dissipation vs. Junction
Temperature
20
Fig 8. Effective Transient Thermal
Impedance
20
T
C
=25 C
V
CE
, Collector-Emitter Voltage(V)
V
CE
, Collector-Emitter Voltage(V)
o
T
C
= 150
o
C
15
15
10
10
5
5
I
C
= 60 A
40 A
20 A
0
0
4
8
12
16
20
I
C
= 60 A
40 A
20 A
0
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
GE
, Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V
GE
Fig 10. Saturation Voltage vs. V
GE
16
1000
V
GE
, Gate -Emitter Voltage (V)
I
C
=20A
V
CC
=480V
12
V
GE
=15V
T
C
=125 C
I
C
, Peak Collector Current(A)
100
o
8
10
4
Safe Operating Area
0
0
20
40
60
80
100
120
1
0.1
1
10
100
1000
10000
Q
G
, Gate Charge (nC)
V
CE ,
Collector-Emitter Voltage(V)
Fig 11. Gate Charge Characterisitics
Fig 12. Turn-off SOA
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
