AP20GT60P-HF
200
200
T
C
=25 C
160
o
I
C
, Collector Current (A)
120
I
C
, Collector Current (A)
20V
18V
15V
12V
V
GE
=10V
T
C
=150
o
C
160
20V
18V
15V
12V
V
GE
=10V
120
80
80
40
40
0
0
4
8
12
16
0
0
4
8
12
16
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
200
4
V
GE
=15V
160
V
GE
= 15 V
V
CE(sat) ,
Saturation Voltage(V)
I
C ,
Collector Current(A)
120
T
C
=25
℃
T
C
=150
℃
3
I
C
= 40 A
2
80
I
C
=20A
40
0
1
0
2
4
6
8
0
40
80
120
160
V
CE
, Collector-Emitter Voltage (V)
Junction Temperature (
o
C)
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
1.6
5000
4000
Normalized V
GE(th)
(V)
1.2
Capacitance (pF)
C
ies
3000
0.8
2000
0.4
1000
-
C
oes
C
res
1
5
9
13
17
21
25
-
0
-50
0
50
100
150
0
29
33
Junction Temperature (
o
C )
V
CE
, Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
