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AP20GT60ASP-HF 参数 Datasheet PDF下载

AP20GT60ASP-HF图片预览
型号: AP20GT60ASP-HF
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道绝缘栅双极晶体管 [N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 101 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
 浏览型号AP20GT60ASP-HF的Datasheet PDF文件第2页浏览型号AP20GT60ASP-HF的Datasheet PDF文件第3页  
AP20GT60ASP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Features
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
V
CES
High Speed Switching
Low Saturation Voltage
V
CE(sat),typ.
=1.7V@I
C
=19A
RoHS Compliant Product
I
C
G
C
E
600V
19A
C
TO-220(P)
G
E
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25 C
I
C
@T
C
=100 C
I
CM
I
F
@T
C
=100 C
I
FM
o
P
D
@T
C
=25 C
o
o
o
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
1
Rating
600
+20
33
19
72
8
40
78.1
-55 to 150
150
Units
V
V
A
A
A
A
A
W
o
o
T
STG
T
J
C
C
Notes:
1.Pulse width limited by Max. junction temperature .
Thermal Data
Symbol
Rthj-c
Rthj-a
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Rthj-c(Diode) Thermal Resistance Junction-Case
Parameter
Value
1.6
2.4
62
Units
o
o
o
C/W
C/W
C/W
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
V
F
t
rr
Q
rr
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
FRD Forward Voltage
FRD Reverse Recovery Time
FRD Reverse Recovery Charge
V
GE
=0V
V
CE
=30V
f=1.0MHz
I
F
=8A
I
F
=8A
di/dt = 100 A/μs
Test Conditions
V
GE
=+20V, V
CE
=0V
V
CE
=600V, V
GE
=0V
V
GE
=15V, I
C
=19A
V
GE
=15V, I
C
=25A
V
CE
=V
GE
, I
C
=250uA
I
C
=20A
V
CC
=480V
V
GE
=15V
V
CE
=480V,
I
c
=20A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
1.7
1.9
-
95
16
35
40
20
140
200
0.1
1
2760
65
40
1.8
30
30
Max. Units
+100 nA
1
2.2
-
6
150
-
-
-
-
-
400
-
-
4400
-
-
2.4
-
-
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
ns
nC
Data and specifications subject to change without notice
1
201112271