AP1RA03GMT-HF
12
3200
f=1.0MHz
I
D
=30A
10
V
GS
, Gate to Source Voltage (V)
C
iss
2400
8
C (pF)
V
DS
=15V
V
DS
=18V
V
DS
=24V
6
1600
4
800
C
oss
C
rss
2
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
Operation in this area
limited by R
DS(ON)
100
100us
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
1ms
0.1
0.1
0.05
P
DM
10
T
C
=25
o
C
Single Pulse
1
0.01
0.1
1
10
10ms
100ms
DC
t
T
0.02
0.01
Duty factor = t/T
Peak T
j
= PDM x R
thjc
+ T
c
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
