AP18T20GI-HF
12
4000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
10
I
D
=8A
V
DS
=160V
3000
C
iss
8
6
C (pF)
2000
4
1000
2
0
0
20
40
60
80
0
1
5
9
13
17
21
C
oss
C
rss
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
1ms
10ms
0.2
I
D
(A)
0.1
0.1
0.05
P
DM
1
t
0.02
0.01
100ms
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
c
=25
o
C
Single Pulse
0
0.1
1
10
100
1s
DC
1000
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4