AP18T10GP
12
1000
f=1.0MHz
I
D
=5A
10
C
iss
V
GS
, Gate to Source Voltage (V)
8
V
DS
= 80 V
6
C (pF)
100
4
C
oss
C
rss
2
0
0
2
4
6
8
10
12
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
I
D
(A)
10
Operation in this
area limited by
R
DS(ON)
0.2
100us
0.1
0.1
0.05
1ms
1
P
DM
t
0.02
T
c
=25
o
C
Single Pulse
0.1
0.1
1
10
10ms
100ms
DC
100
1000
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
