AP18T10AGK-HF
10
800
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
I
D
=2A
V
DS
= 50 V
600
C (pF)
6
400
C
iss
4
200
2
C
oss
C
rss
0
0
2
4
6
8
10
12
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
0.1
I
D
(A)
Operation in this area
limited by R
DS(ON)
100us
1ms
10ms
100ms
0.1
0.05
1
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 120℃/W
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
100
1s
DC
0.001
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4