AP18P10GI
40
20
T
C
= 25
o
C
30
-10V
-7.0V
-5.0V
-4.5V
-I
D
, Drain Current (A)
T
C
=150
o
C
15
-10V
-7.0V
-5.0V
-4.5V
-I
D
, Drain Current (A)
20
10
V
G
= -3.0V
5
10
V
G
= -3.0 V
0
0
4
8
12
16
20
0
0
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
300
2.0
270
I
D
= -8 A
T
C
=25
℃
Normalized R
DS(ON)
I
D
= - 12 A
V
G
= -10V
1.6
240
R
DS(ON)
(m
Ω
)
210
1.2
180
0.8
150
120
0.4
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
6
1.5
4
T
j
=150
o
C
T
j
=25
o
C
Normalized -V
GS(th)
(V)
-I
S
(A)
1.0
2
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4