AP18P10GH/J
f=1.0MHz
15
10000
-V
GS
, Gate to Source Voltage (V)
12
V
DS
= - 80 V
I
D
= -8A
9
C
iss
1000
6
100
C (pF)
C
oss
C
rss
3
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
10
100us
0.2
0.1
-I
D
(A)
0.1
1ms
1
0.05
P
DM
t
0.02
T
C
=25
o
C
Single Pulse
0
0.1
1
10
10ms
100ms
DC
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V
DS
= -5V
12.5
T
j
=25
o
C
T
j
=150
o
C
V
G
Q
G
-I
D
, Drain Current (A)
10
-4.5V
Q
GS
Q
GD
7.5
5
2.5
Charge
0
0
2
4
6
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
