AP18P10AGH/J-HF
f=1.0MHz
12
2000
V
DS
= - 80 V
I
D
= -8A
10
-V
GS
, Gate to Source Voltage (V)
1600
C
iss
8
6
C (pF)
1200
800
4
400
2
C
oss
C
rss
0
0
10
20
30
40
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100us
10
0.2
-I
D
(A)
1ms
0.1
0.1
0.05
P
DM
1
T
C
=25
o
C
Single Pulse
0
0.1
1
10
10ms
100ms
DC
t
0.02
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
16
16
V
DS
= -5V
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
T
j
=25
o
C
T
j
= -40
o
C
0
0
2
4
6
8
0
25
50
75
100
125
150
12
12
8
8
4
T
j
=150 C
o
4
-V
GS
, Gate-to-Source Voltage (V)
T
C
, Case Temperature (
o
C )
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
