AP18N20GH/J-HF
15
10000
f=1.0MHz
I
D
=10A
12
V
GS
, Gate to Source Voltage (V)
V
DS
=100V
V
DS
=130V
V
DS
=160V
C (pF)
1000
Ciss
9
Coss
100
6
10
3
Crss
0
0
6
12
18
24
30
1
1
11
21
31
41
51
61
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
I
D
(A)
1ms
0.1
0.1
0.05
P
DM
0.02
1
T
C
=25
o
C
Single Pulse
0
1
10
100
10ms
100ms
1s
DC
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
15
V
DS
=5V
12
T
j
=25
o
C
V
G
T
j
=150 C
o
I
D
, Drain Current (A)
Q
G
9
10V
Q
GS
Q
GD
6
3
Charge
0
0
2
4
6
8
10
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4