AP18N20GI
16
10000
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=10A
12
1000
C (pF)
V
DS
= 100 V
V
DS
= 130 V
V
DS
= 160 V
8
C
iss
100
C
oss
4
10
C
rss
0
0
4
8
12
16
20
24
1
1
21
41
61
81
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor = 0.5
Normalized Thermal Response (R
thjc
)
10
100us
0.2
I
D
(A)
0.1
0.1
1ms
1
0.05
P
DM
t
T
0.02
T
C
=25 C
Single Pulse
0
0.1
1
10
100
o
10ms
100ms
1s
DC
1000
0.01
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
15
V
DS
=5V
12
V
G
Q
G
I
D
, Drain Current (A)
9
10V
T
j
=150 C
o
T
j
=25 C
o
Q
GS
Q
GD
6
3
Charge
0
Q
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
