AP18N20AGS-HF
40
30
T
C
= 25 C
o
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
8.0V
7.0V
6.0V
V
G
= 5.0V
T
C
= 150 C
o
20
10V
8.0V
7.0V
6.0V
V
G
=5.0V
20
10
10
0
0
4
8
12
16
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
132
2.8
I
D
=8A
130
T
C
=25 C
Normalized R
DS(ON)
o
2.4
I
D
=8A
V
G
=10V
R
DS(ON)
(m
Ω
)
128
2.0
126
1.6
124
1.2
122
0.8
120
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
8
I
D
=250uA
1.6
6
Normalized V
GS(th)
(V)
1.2
1.4
I
S
(A)
T
j
=150 C
4
o
T
j
=25 C
o
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
