AP1802GU
20
20
T
A
=25 C
16
o
I
D
, Drain Current (A)
12
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
= 150 C
16
o
5.0V
4.5V
3.5V
2.5V
12
8
8
4
4
V
G
= 1.5 V
0
0
1
2
3
0
0
1
2
V
G
= 1 .5V
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.5
I
D
=3A
40
Normalized R
DS(ON)
T
A
=25
o
C
I
D
=5A
V
G
=4.5V
1.2
R
DS(ON)
(m
Ω
)
35
0.9
30
25
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
5
4
1.4
3
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
1.0
2
0.6
1
0
0
0.2
0.4
0.6
0.8
1
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
