AP16N50I-HF
30
16
T
C
=25 C
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
16V
12V
10V
7.0V
V
G
=6.0V
T
C
=150
o
C
12
16V
12V
10V
7.0V
V
G
=6.0V
20
8
10
4
0
0
0.0
4.0
8.0
12.0
16.0
20.0
0.0
4.0
8.0
12.0
16.0
20.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.8
2.4
I
D
=6.5A
V
G
=10V
Normalized BV
DSS
(V)
1.1
2.0
1
Normalized R
DS(ON)
-50
0
50
100
150
1.6
1.2
0.9
0.8
0.8
0.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature (
o
C)
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.5
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.3
T
j
=150
o
C
I
S
(A)
6
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.1
4
0.9
2
0.7
0
0
0.2
0.4
0.6
0.8
1
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
