AP15P15GP-HF
50
40
T
C
= 25
o
C
40
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V
G
= - 4.0 V
T
C
=150
o
C
30
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
30
20
20
10
10
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
24
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.4
I
D
= -8 A
T
C
=25
℃
2.0
I
D
= - 12 A
V
G
= -10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
150
1.6
1.2
140
0.8
130
0.4
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
12
10
1.5
6
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
1.2
1.4
8
-I
S
(A)
1.0
4
0.5
2
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
