AP15P15GH-HF
f=1.0MHz
15
4000
-V
GS
, Gate to Source Voltage (V)
12
V
DS
= - 80 V
I
D
= - 18 A
9
3000
C
iss
C (pF)
2000
6
1000
3
0
0
20
40
60
80
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100us
1ms
10
0.2
0.1
-I
D
(A)
10ms
1
0.1
0.05
100ms
DC
T
C
=25
o
C
Single Pulse
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
G
80
Q
G
P
D
(W)
60
-10V
Q
GS
Q
GD
40
20
Charge
0
0
50
100
150
Q
T
C ,
Case Temperature ( C )
o
Fig 11. Typical Power Dissipation
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
