AP15P10GH/J
30
30
-10V
T
C
=25
o
C
-7.0V
-I
D
, Drain Current (A)
20
T
C
=150
o
C
-I
D
, Drain Current (A)
-10V
-7.0V
20
-5.0V
10
-5.0V
10
-4.5V
-4.5V
V
G
= - 3 .0V
0
V
G
= - 3 .0V
0
0
5
10
15
20
25
0
5
10
15
20
25
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
550
2.4
450
I
D
= -9 A
T
C
=25
℃
Normalized R
DS(ON)
1.9
I
D
= -9 A
V
G
= - 10V
R
DS(ON)
(m
Ω
)
350
1.4
250
0.9
150
0.4
2
4
6
8
10
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.5
10
8
Normalized -V
GS(th)
(V)
1.1
-I
S
(A)
6
T
j
=150
o
C
T
j
=25
o
C
4
0.7
2
0
0
0.4
0.8
1.2
0.3
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
