AP15P10GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-1mA
Min.
-100
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.1
-
-
8
-
-
-
37
5
15
11
25
56
36
250
75
3.6
Max. Units
-
-
210
-3
-
-25
-100
±100
60
-
-
-
-
-
-
-
-
5
V
V/℃
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
GS
=-10V, I
D
=-9A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9A
V
DS
=-100V, V
GS
=0V
V
DS
=-80V, V
GS
=0V
V
GS
= ±20V
I
D
=-9A
V
DS
=-80V
V
GS
=-10V
V
DS
=-50V
I
D
=-9A
R
G
=10Ω,V
GS
=-10V
R
D
=5.6Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1180 1900
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-9A, V
GS
=0V
I
S
=-9A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
95
410
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
