AP15N03P
f=1.0MHz
16
1000
14
I
D
=8A
V
DS
=16V
V
DS
=20V
Ciss
Coss
100
V
GS
, Gate to Source Voltage (V)
12
10
V
DS
=24V
8
6
C (pF)
4
Crss
2
0
0
2
4
6
8
10
12
14
16
10
1
6
11
16
21
26
31
Q
G
, Total Gate Charge (nC)
V
DS
(V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3
10
T
j
=150
o
C
2
V
GS(th)
(V)
1
0
-50
I
S
(A)
T
j
=25
o
C
1
0.1
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
50
100
150
V
SD
(V)
T
j
, Junction Temperature( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature