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AP15N03GJ 参数 Datasheet PDF下载

AP15N03GJ图片预览
型号: AP15N03GJ
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型功率MOSFET [N-CHANNEL ENHANCEMENT MODE POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 6 页 / 83 K
品牌: A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
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AP15N03GH/J
50
40
T
C
=25
o
C
V
G
=10V
40
30
T
C
=150
o
C
V
G
=10V
V
G
=8.0V
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
V
G
=8.0V
V
G
=6.0V
20
20
V
G
=6.0V
10
10
V
G
=4.0V
V
G
=4.0V
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
90
1.8
I
D
=8A
I
D
=8A
80
T
C
=25 C
1.4
o
1.6
V
G
=10V
R
DS(ON)
(m
Ω
)
70
Normalized R
DS(ON)
2
3
4
5
6
7
8
9
10
11
1.2
60
1.0
50
0.8
40
0.6
-50
0
50
100
150
V
GS
(V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature