AP13P15GS/P
f=1.0MHz
12
10000
10
-V
GS
, Gate to Source Voltage (V)
8
I
D
= -7A
V
DS
= -120V
1000
C
iss
6
C (pF)
C
oss
100
4
C
rss
2
0
0
10
20
30
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100us
10
0.2
1ms
-I
D
(A)
0.1
0.1
0.05
1
10ms
100ms
DC
T
C
=25
o
C
Single Pulse
P
DM
t
0.02
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.1
0.1
1
10
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
V
G
V
DS
=-5V
6
Q
G
T
j
=25 C
o
-I
D
, Drain Current (A)
T
j
=150 C
o
-10V
Q
GS
Q
GD
4
2
Charge
0
Q
0
2
4
6
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
