AP13N50W
12
3200
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
I
D
=14A
V
DS
=200V
10
2400
C
iss
8
C (pF)
6
1600
4
800
2
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
29
C
oss
C
rss
33
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this area
limited by R
DS(ON)
10
100us
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
0.2
I
D
(A)
0.1
1ms
1
0.1
0.05
P
DM
T
C
=25
o
C
Single Pulse
0
1
10
100
10ms
100ms
DC
t
0.02
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
