AP1333U
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-20
-
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
-
1
-
-
-
1.7
0.3
0.4
5
8
10
2
66
25
20
Max.
-
-
600
800
1000
-1.2
-
-1
-10
±100
2.7
-
-
-
-
-
-
105.6
-
-
Unit
V
V/℃
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-550mA
V
GS
=-4.5V, I
D
=-500mA
V
GS
=-2.5V, I
D
=-300mA
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-500mA
V
DS
=-20V, V
GS
=0V
V
DS
=-16V ,V
GS
=0V
V
GS
=±12V
I
D
=-500mA
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-500mA
R
G
=3.3Ω,V
GS
=-5V
R
D
=20Ω
V
GS
=0V
V
DS
=-10V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Test Conditions
I
S
=-300mA, V
GS
=0V
Min.
-
Typ.
-
Max.
-1.2
Unit
V
Notes:
1.Pulse
width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t
≦
10
sec.
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
