AP1333GU
12
100
f=1.0MHz
-V
GS
, Gate to Source Voltage (V)
10
I
D
=-0.5A
V
DS
=-16V
C
iss
8
6
C (pF)
C
oss
C
rss
4
2
0
0
1
2
3
4
10
1
3
5
7
9
11
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
Duty factor=0.5
Normalized Thermal Response (R
thja
)
1
100us
0.2
0.1
-I
D
(A)
0.05
0.1
0.02
1ms
0.1
P
DM
0.01
t
T
Single Pulse
T
A
=25 C
Single Pulse
0.01
0.1
1
10
o
10ms
100ms
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
A-POWER [ ADVANCED POWER ELECTRONICS CORP. ]
